Semiconductor device comprising passive components

ABSTRACT

A method of making a semiconductor device includes the steps of: providing a semiconductor substrate ( 110, 510, 1010, 1610 ) having a patterned interconnect layer ( 120, 520, 1020, 1620 ) formed thereon; depositing a first dielectric material ( 130, 530, 1030, 1630 ) over the interconnect layer; depositing a first electrode material ( 140, 540, 1040, 1640 ) over the first dielectric material; depositing a second dielectric material ( 150, 550, 1050, 1650 ) over the first electrode material; depositing a second electrode material ( 160, 560, 1060, 1660 ) over the second dielectric material; patterning the second electrode material to form a top electrode ( 211, 611, 1111, 1611 ) of a first capacitor ( 210, 710, 1310, 1615 ); and patterning the first electrode material to form a top electrode ( 221, 721, 1221, 1621 ) of a second capacitor ( 220, 720, 1320, 1625 ), to form an electrode ( 212, 712, 1212, 1612 ) of the first capacitor, and to define a resistor ( 230, 730, 1330 ).

This application is a divisional application of prior application Ser.No. 11/150,499, filed Jun. 9, 2005, now U.S. Pat. No. 7,306,986.

FIELD OF THE INVENTION

This invention relates generally to semiconductor devices, and relatesmore particularly to passive components in semiconductor devices.

BACKGROUND OF THE INVENTION

Passive components such as capacitors, resistors, inductors, and thelike are used in semiconductor devices to perform a wide variety offunctions. The passive components can be optimized for a particularfunction or functions by, for example, controlling the size anddimensions of the passive component, and/or by controlling the materialsused to form the passive component. As an example, consider ametal-insulator-metal (MIM) capacitor formed within aninter-layer-dielectric (ILD) region of a semiconductor device. If a highcapacitive density is desired, the MIM capacitor can be constructed suchthat its thickness is as small as possible, and/or can be constructedusing materials having high dielectric constants. On the other hand, ifa high performance capacitor is desired, the MIM capacitor can beconstructed using materials that provide high linearity, low leakage,and a low temperature coefficient of capacitance (TCC). For manyapplications, both a high performance capacitor and a high densitycapacitor are desired on a single integrated circuit. Currentfabrication methods, however, are incapable of providing such a circuit.Accordingly, there exists a need for a semiconductor component, and amethod of making the semiconductor component, in which both a highperformance capacitor and a high density capacitor are integrated on asingle integrated circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood from a reading of the followingdetailed description, taken in conjunction with the accompanying figuresin the drawings in which:

FIG. 1 is a cross-sectional view of a portion of a semiconductor deviceat a particular stage in a manufacturing process according to anembodiment of the invention;

FIG. 2 is a cross-sectional view of a portion of the semiconductordevice of FIG. 1 at a later stage of the manufacturing process accordingto an embodiment of the invention;

FIG. 3 is a cross-sectional view of a portion of the semiconductordevice of FIG. 2 at a later stage of the manufacturing process accordingto an embodiment of the invention;

FIG. 4 is a flowchart illustrating a method of making the semiconductordevice of FIGS. 1-3 according to an embodiment of the invention;

FIG. 5 is a cross-sectional view of a portion of another semiconductordevice at a particular point in a manufacturing process according to anembodiment of the invention;

FIG. 6 is a cross-sectional view of a portion of the semiconductordevice of FIG. 5 at a later stage of the manufacturing process accordingto an embodiment of the invention;

FIG. 7 is a cross-sectional view of the semiconductor device of FIG. 6at a later stage of the manufacturing process according to an embodimentof the invention;

FIG. 8 is a cross-sectional view of a portion of the semiconductordevice of FIG. 7 at a later stage of the manufacturing process accordingto an embodiment of the invention;

FIG. 9 is a flowchart illustrating a method of making the semiconductordevice of FIGS. 5-8 according to an embodiment of the invention;

FIG. 10 is a cross-sectional view of a portion of another semiconductordevice at a particular stage in a manufacturing process according to anembodiment of the invention;

FIG. 11 is a cross-sectional view of a portion of the semiconductordevice of FIG. 10 at a later stage of the manufacturing processaccording to an embodiment of the invention;

FIG. 12 is a cross-sectional view of the semiconductor device of FIG. 11at a later stage of the manufacturing process according to an embodimentof the invention;

FIG. 13 is a cross-sectional view of a portion of the semiconductordevice of FIG. 12 at a later stage of the manufacturing processaccording to an embodiment of the invention;

FIG. 14 is a cross-sectional view of a portion of the semiconductordevice of FIG. 13 at a later stage of the manufacturing processaccording to an embodiment of the invention;

FIG. 15 is a flowchart illustrating a method of making the semiconductordevice of FIGS. 10-14 according to an embodiment of the invention;

FIG. 16 is a cross-sectional view of a portion of another semiconductordevice at a particular stage of a manufacturing process according to anembodiment of the invention; and

FIG. 17 is a flow chart illustrating a method of making thesemiconductor device of FIG. 16 according to an embodiment of theinvention.

For simplicity and clarity of illustration, the drawing figuresillustrate the general manner of construction, and descriptions anddetails of well-known features and techniques may be omitted to avoidunnecessarily obscuring the invention. Additionally, elements in thedrawing figures are not necessarily drawn to scale. For example, thedimensions of some of the elements in the figures may be exaggeratedrelative to other elements to help improve understanding of embodimentsof the present invention. The same reference numerals in differentfigures denote the same elements.

The terms “first,” “second,” “third,” “fourth,” and the like in thedescription and in the claims, if any, are used for distinguishingbetween similar elements and not necessarily for describing a particularsequential or chronological order. It is to be understood that the termsso used are interchangeable under appropriate circumstances such thatthe embodiments of the invention described herein are, for example,capable of operation in sequences other than those illustrated orotherwise described herein. Furthermore, the terms “comprise,”“include,” “have,” and any variations thereof, are intended to cover anon-exclusive inclusion, such that a process, method, article, orapparatus that comprises a list of elements is not necessarily limitedto those elements, but may include other elements not expressly listedor inherent to such process, method, article, or apparatus.

The terms “left,” “right,” “front,” “back,” “top,” “bottom,” “over,”“under,” and the like in the description and in the claims, if any, areused for descriptive purposes and not necessarily for describingpermanent relative positions. It is to be understood that the terms soused are interchangeable under appropriate circumstances such that theembodiments of the invention described herein are, for example, capableof operation in other orientations than those illustrated or otherwisedescribed herein. The term “coupled,” as used herein, is defined asdirectly or indirectly connected in an electrical, mechanical, or othermanner.

DETAILED DESCRIPTION OF THE DRAWINGS

In one embodiment of the invention, a method of making a semiconductordevice comprises: providing a semiconductor substrate having a patternedinterconnect layer formed thereon; depositing a first dielectricmaterial over the patterned interconnect layer; depositing a firstelectrode material over the first dielectric material; depositing asecond dielectric material over the first electrode material; depositinga second electrode material over the second dielectric material;depositing a third dielectric material over the second electrodematerial; patterning the third dielectric material and the secondelectrode material to form a top electrode of a first capacitor; andpatterning the second dielectric material and the first electrodematerial to form a top electrode of a second capacitor, to form anelectrode of the first capacitor, and to define a resistor. In anotherembodiment of the invention, the patterned interconnect layer forms abottom electrode of the second capacitor and is absent from the firstcapacitor, and patterning the first electrode material does not define aresistor.

It should be understood that the word “over” as used herein may, butdoes not necessarily, mean “on.” Accordingly, for example, the phrase“depositing a second dielectric material over the first electrodematerial” can mean, in at least one embodiment of at least one of themethods described herein, depositing a second dielectric material on thefirst electrode material. Similar phrases herein can have similarmeanings with respect to the words “over” and “on.”

FIG. 1 is a cross-sectional view of a portion of a semiconductor device100 at a particular stage in a manufacturing process according to anembodiment of the invention. As illustrated in FIG. 1, semiconductordevice 100 comprises a semiconductor substrate 110, a patternedinterconnect layer 120 above semiconductor substrate 110, a dielectricmaterial 130 over patterned interconnect layer 120, an electrodematerial 140 over dielectric material 130, a dielectric material 150over electrode material 140, an electrode material 160 over dielectricmaterial 150, and a dielectric material 170 over electrode material 160.

As an example, patterned interconnect layer 120 can comprise copper,including, in one embodiment, damascene copper. Patterned interconnectlayer 120 can also comprise aluminum or another conductive material asknown in the art. In one embodiment, patterned interconnect layer 120can comprise a portion 121 and a portion 122 separated from portion 121by a gap 123. In at least one embodiment, gap 123 represents a region ofsilicon dioxide, a region of silicon-dioxide-based material, or a regionof material having a low dielectric constant.

As another example, dielectric material 130 can comprise silicon nitrideor another dielectric material not containing oxygen. In a particularembodiment, dielectric material 130 comprises plasma-enhanced nitride(PEN).

As still another example, dielectric material 150 can comprise amaterial or a combination of materials having an effective dielectricconstant greater than approximately eight, and preferably greater thanapproximately twenty. In one embodiment, dielectric material 150comprises a stack comprising a first layer of hafnium oxide, a layer oftantalum oxide above the first layer of hafnium oxide, and a secondlayer of hafnium oxide above the layer of tantalum oxide. In otherembodiments, dielectric material 150 can comprise zirconium oxide,aluminum oxide, titanium oxide, barium-strontium-titanate (BST), siliconnitride (including PEN).

In further embodiments, dielectric material 150 can comprise a laminatestructure in which multiple layers of any of the foregoing materials, orother similar materials not mentioned herein, are stacked one aboveanother. In these further embodiments, the particular layers of thelaminate structure that are to contact an adjacent material, such as anelectrode material, are chosen so as to be compatible with that adjacentmaterial. In this context, compatibility means compatibility in terms ofmaterial adhesion properties, chemical and electrical interactionproperties, and the like. As an example, tantalum oxide cannot be placeddirectly on top of copper because the tantalum oxide will oxidize thecopper. As another example, tantalum oxide cannot be placed directly ontop of tantalum nitride because the oxygen will diffuse into thetantalum nitride and the nitrogen will diffuse into the tantalum oxide,thus negatively affecting the electric properties of the electrodematerial and the dielectric properties of the dielectric material,respectively. Hafnium oxide, in contrast, does not exhibit an unwantedreaction with tantalum nitride.

In still further embodiments, dielectric material 150 can comprise amixture in which any of a variety of combinations of any of theforegoing materials, or other similar materials not mentioned herein, inany of a variety of proportions, are mixed together to form a layer orlayers of dielectric material.

As yet another example, electrode material 140 can comprise tantalumnitride, titanium nitride, tantalum, tungsten-based metals, nickel-basedmetals, other refractory metals, and similar materials. As furtherdiscussed below, a portion of electrode material 140 may be used, incertain embodiments of the invention, as a resistor, while, in certainembodiments of the invention, no portion of electrode material 160 isused as a resistor. Accordingly, electrode material 160 can comprise anyof the materials listed above for electrode material 140, and can alsocomprise more highly-conductive materials such as copper, aluminum,gold, and the like.

Dielectric material 170 can be similar in composition to dielectricmaterial 130, and can also comprise, for example, amorphous carbon.Dielectric material 170, in at least one embodiment, serves noelectrical function, but can act as an etch stop for a via etch, and/oras a hard mask during the subsequent patterning of electrode material160. In addition to serving as the insulator in a MIM capacitor,dielectric materials 150 and 130 can also serve as etch stops, anddielectric material 150 can further serve as a hard mask, during thesubsequent patterning of electrode material 160.

FIG. 2 is a cross-sectional view of a portion of semiconductor device100 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 2, dielectricmaterial 170 and electrode material 160 have been patterned to form anelectrode 211 of a capacitor 210. As further illustrated in FIG. 2,dielectric material 150 and electrode material 140 have been patternedto form an electrode 221 of a capacitor 220, to form an electrode 212 ofcapacitor 210, and to define a resistor 230. At least portions ofcapacitors 210 and 220 and resistor 230 are formed above patternedinterconnect layer 120.

In one embodiment of the invention, portion 121 of patternedinterconnect layer 120 forms an electrode 213 of capacitor 210. In thesame or another embodiment, portion 122 of patterned interconnect layer120 forms an electrode 222 of capacitor 220.

As an example, electrode 211 can be a top electrode of capacitor 210,electrode 212 can be a middle electrode of capacitor 210, and electrode213 can be a bottom electrode of capacitor 210. As another example,electrode 221 can be a top electrode of capacitor 220 and electrode 222can be a bottom electrode of capacitor 220.

In one embodiment, capacitor 210 can have a high capacitive density. Inother words, capacitor 210 can have a high capacitance per unit area,defined herein as a capacitance per unit area (C/A) equal to or greaterthan approximately 4 femto-Farads per square micrometer (fF/μm²). In thesame or another embodiment, capacitor 220 can have a lower capacitanceper unit area but a higher quality than capacitor 210. As an example,capacitor 220 can have a C/A of approximately 1.6 fF/μm². Capacitor 220can have a higher quality than capacitor 210 in part because capacitor220 contains dielectric materials that perform better with respect to,for example, leakage current, linearity, and/or reliability than atleast some of the materials that make up capacitor 210. In at least oneembodiment, differences in the dielectric materials that form a part ofcapacitors 210 and 220 also contribute to the differences in quality andcapacitance per unit area between capacitors 210 and 220. Accordingly,in this at least one embodiment, at least one of the dielectric layersof capacitor 210 comprises a material that is different from a materialof at least one of the dielectric layers of capacitor 220. Specificexamples of some acceptable dielectric materials for capacitors 210 and220 were given above.

As an example, capacitor 220 can have one or more of a high linearity, alow TCC, and a low leakage material, making capacitor 220 a highperformance capacitor. Resistor 230 can be, for example, a highperformance thin film resistor.

Because both capacitor 210 and capacitor 220 are located on or oversemiconductor substrate 110, semiconductor device 100 offers greaterperformance flexibility than would a semiconductor device having only asingle capacitor, whether the single capacitor had a high capacitivedensity or high linearity, low TCC, or low leakage. As just one example,a semiconductor device such as semiconductor device 100 may be useful incommunication systems, both wireless and wire based.

FIG. 3 is a cross-sectional view of a portion of semiconductor device100 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 3, an electricalcontact 311 has been coupled to electrode 213 of capacitor 210,electrical contacts 312 and 313 have been coupled to electrode 211 ofcapacitor 210, and electrical contact 314 has been coupled to electrode212 of capacitor 210. As further illustrated in FIG. 3, electricalcontacts 321 and 322 have been coupled to electrode 221 of capacitor220, an electrical contact 323 has been coupled to electrode 222 ofcapacitor 220, and electrical contacts 331 and 332 have been coupled toresistor 230. As known in the art, resistor 230 could, in certainembodiments, be coupled to further electrical contacts in addition tothe two electrical contacts 331 and 332 illustrated in FIG. 3.Similarly, electrodes 211, 212, and 213 of capacitor 210 and electrodes221 and 222 of capacitor 220 could be coupled to further electricalcontacts in addition to the one or two electrical contacts illustratedin FIG. 3 to be coupled to electrodes 211, 212, 213, 221, and 222.

In the illustrated embodiment, capacitor 210 comprises a stackedcapacitor having two MIM capacitors wired in parallel. With multiple MIMcapacitors wired in parallel, capacitor 210 potentially has a higher C/Athan a non-stacked capacitor, but would possibly be of lower qualitythan the non-stacked capacitor because of the lower quality of thedielectric materials of the stacked capacitor.

In one embodiment, at least electrical contacts 311, 312, 313, 314, 321,322, and 323 are formed substantially simultaneously with each other. Ina non-illustrated embodiment, at least electrical contacts 312, 313,314, 321, 322, and 323 are formed substantially simultaneously with eachother, but electrical contact 311 is not formed. In that non-illustratedembodiment, electrode 213 of capacitor 210 would be electricallyconnected through portion 121 to another portion of the integratedcircuit. It will be recognized by one of ordinary skill in the art thatportion 121 can, but does not necessarily, extend underneath all ofelectrodes 211 or 212. Similarly, portion 122 can, but does notnecessarily, extend underneath all of electrode 221. Furthermore,portions 121 and 122 are not necessarily continuous underneathelectrodes 211, 212, and 221.

FIG. 4 is a flowchart illustrating a method 400 of making semiconductordevice 100 according to an embodiment of the invention. Method 400comprises, among other steps, two patterning steps, indicating thatmethod 400 is a two-mask manufacturing method integrating a one-mask anda two-mask MIM capacitor with a resistor on a single integrated circuit.It will be understood by one of ordinary skill in the art that the twomasks referred to in the preceding sentence are the masks required toform a MIM capacitor in accordance with an embodiment of the invention,and that additional masks may be required to form other portions of theintegrated circuit, such as, for example, the patterned interconnectlayer, the upper interconnect structure, optional layers not required toform the basic MIM capacitor structure, and the like.

A step 410 of method 400 is to provide a semiconductor substrate havinga patterned interconnect layer formed thereon. As an example, thesemiconductor substrate can be similar to semiconductor substrate 110,first shown in FIG. 1, and the patterned interconnect layer can besimilar to patterned interconnect layer 120, also first shown in FIG. 1.

A step 420 of method 400 is to deposit a first dielectric material overthe patterned interconnect layer. As an example, the first dielectricmaterial can be similar to dielectric material 130, first shown in FIG.1.

A step 430 of method 400 is to deposit a first electrode material overthe first dielectric material. As an example, the first electrodematerial can be similar to electrode material 140, first shown in FIG.1.

A step 440 of method 400 is to deposit a second dielectric material overthe first electrode material. As an example, the second dielectricmaterial can be similar to dielectric material 150, first shown in FIG.1.

A step 450 of method 400 is to deposit a second electrode material overthe second dielectric material. As an example, the second electrodematerial can be similar to electrode material 160, first shown in FIG.1.

A step 460 of method 400 is to deposit a third dielectric material overthe second electrode material. As an example, the third dielectricmaterial can be similar to dielectric material 170, first shown in FIG.1.

A step 470 of method 400 is to pattern the third dielectric material andthe second electrode material, using a first mask, to form a topelectrode of a first capacitor. As an example, the first capacitor canbe similar to capacitor 210, first shown in FIG. 2, and the topelectrode of the first capacitor can be similar to electrode 211, alsofirst shown in FIG. 2.

A step 480 of method 400 is to pattern the second dielectric materialand the first electrode material, using a second mask, to form a topelectrode of a second capacitor, to form a middle electrode of the firstcapacitor, and to define a resistor. As an example, the second capacitorcan be similar to capacitor 220, the top electrode of the secondcapacitor can be similar to electrode 221, the middle electrode can besimilar to electrode 212, and the resistor can be similar to resistor230, all of which are first shown in FIG. 2.

A step 490 of method 400 is to form at least one electrical contactcoupled to at least the top and middle electrodes of the first capacitorand to at least the top electrode of the second capacitor, and to format least two electrical contacts to the resistor. As an example, theelectrical contacts can be similar to one or more of electrical contacts311, 312, 313, 314, 321, 322, 323, 331, and 332, all of which were firstshown in FIG. 3. In one embodiment of method 400, step 480 comprisesforming the electrical contacts simultaneously with each other.

In one embodiment of method 400, the patterned interconnect layer formsa bottom electrode of the second capacitor and is absent from the firstcapacitor. In a different embodiment of method 400, the patternedinterconnect layer forms a bottom electrode of the first capacitor and abottom electrode of the second capacitor. In that different embodimentof method 400, the electrode of the first capacitor comprises a middleelectrode of the first capacitor, and the middle electrode of the firstcapacitor is located between the top electrode of the first capacitorand the bottom electrode of the first capacitor.

FIG. 5 is a cross-sectional view of a portion of a semiconductor device500 at a particular stage in a manufacturing process according to anembodiment of the invention. As illustrated in FIG. 5, semiconductordevice 500 comprises a semiconductor substrate 510, a patternedinterconnect layer 520 above semiconductor substrate 510, a dielectricmaterial 530 over patterned interconnect layer 520, an electrodematerial 540 over dielectric material 530, a dielectric material 550over electrode material 540, an electrode material 560 over dielectricmaterial 550, and a dielectric material 570 over electrode material 560.As an example, semiconductor substrate 510, patterned interconnect layer520, dielectric material 530, electrode material 540, dielectricmaterial 550, electrode material 560, and dielectric material 570 can besimilar to semiconductor substrate 110, patterned interconnect layer120, dielectric material 130, electrode material 140, dielectricmaterial 150, electrode material 160, and dielectric material 170,respectively, first shown in FIG. 1. In the illustrated embodiment,patterned interconnect layer 520 comprises a portion 521 and a portion522 separated from portion 521 by a gap 523. Portion 521, portion 522,and gap 523 can be similar to, respectively, portion 121, portion 122,and gap 123, first shown in FIG. 1.

As further illustrated in FIG. 5, dielectric material 530 has beenpatterned to form an opening 531 that exposes a portion 525 of patternedinterconnect layer 520, and electrode material 540 has been depositedover dielectric material 530 and within opening 531 such that electrodematerial 540 physically and electrically contacts, or is coupled to,portion 525 of patterned interconnect layer 520.

FIG. 6 is a cross-sectional view of a portion of semiconductor device500 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 6, dielectricmaterial 570 and electrode material 560 have been patterned to form anelectrode 611. As an example, electrode 611 can be similar to electrode211, first shown in FIG. 2.

FIG. 7 is a cross-sectional view of semiconductor device 500 at a laterstage of the manufacturing process according to an embodiment of theinvention. As illustrated in FIG. 7, electrode 611 is an electrode of acapacitor 710. As further illustrated in FIG. 7, dielectric material 550and electrode material 540 have been patterned to form an electrode 721of a capacitor 720, to form an electrode 712 of capacitor 710, and todefine a resistor 730. At least portions of capacitors 710 and 720 andresistor 730 are formed above patterned interconnect layer 520. As anexample, electrode 721 and resistor 730 can be similar to, respectively,electrode 221 and resistor 230, both of which were first shown in FIG.2. As another example, capacitor 710 can be similar to capacitor 210,first shown in FIG. 2, in that capacitor 710, like capacitor 210, canhave a high capacitive density. As still another example, capacitor 720can be similar to capacitor 220, first shown in FIG. 2, in thatcapacitor 720 can have a higher quality than capacitor 710, just ascapacitor 220 can have a higher quality than capacitor 210.

In one embodiment of the invention, portion 521 of patternedinterconnect layer 520 forms an electrode 713 of capacitor 710. In thatembodiment, electrode 713 and electrode 712 form a bottom electrode ofcapacitor 710. In a different embodiment, where portion 521 does notform electrode 713, electrode 712 forms a bottom electrode of capacitor710. In the same or another embodiment, portion 522 of patternedinterconnect layer 520 forms an electrode 722 of capacitor 720.

FIG. 8 is a cross-sectional view of a portion of semiconductor device500 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 8, an electricalcontact 811 has been coupled to electrode 713 of capacitor 710,electrical contacts 812 and 813 have been coupled to electrode 611 ofcapacitor 710, and electrical contact 814 has been coupled to electrode712 of capacitor 710. It will be understood by one of ordinary skill inthe art that electrical contact 814 would be formed only in thoseembodiments where portion 521 of patterned interconnect layer 520 isabsent. In embodiments where portion 521 is present, electrical contactto electrode 712 is accomplished via portion 521.

As further illustrated in FIG. 8, electrical contacts 821 and 822 havebeen coupled to electrode 721 of capacitor 720, an electrical contact823 has been coupled to electrode 722 of capacitor 720, and electricalcontacts 831 and 832 have been coupled to resistor 730. As known in theart, resistor 730 could, in certain embodiments, be coupled to furtherelectrical contacts in addition to the two electrical contacts 831 and832 illustrated in FIG. 8. Similarly, electrodes 611, 712, and 713 ofcapacitor 710 and electrodes 721 and 722 of capacitor 720 could becoupled to further electrical contacts in addition to the one or twoelectrical contacts illustrated in FIG. 8 to be coupled to electrodes611, 712, 713, 721, and 722.

In one embodiment, at least electrical contacts 811, 812, 813, 814, 821,822, and 823 are formed substantially simultaneously with each other. Ina non-illustrated embodiment, at least electrical contacts 812, 813,814, 821, and 822 are formed substantially simultaneously with eachother, but electrical contact 811 and/or electrical contact 823 are notformed. In that non-illustrated embodiment, electrode 713 of capacitor710 and/or electrode 722 of capacitor 720 would be electricallyconnected through portion 521 and portion 522, respectively, to anotherportion of the integrated circuit.

FIG. 9 is a flowchart illustrating a method 900 of making semiconductordevice 500 according to an embodiment of the invention. Method 900comprises, among other steps, three patterning steps, indicating thatmethod 900 is a three-mask manufacturing method integrating a one-maskand a three-mask MIM capacitor with a resistor on a single integratedcircuit. It will be understood by one of ordinary skill in the art thatthe three masks referred to in the preceding sentence are the masksrequired to form a MIM capacitor in accordance with an embodiment of theinvention, and that additional masks may be required to form otherportions of the integrated circuit, such as, for example, the patternedinterconnect layer, the upper interconnect structure, optional layersnot required to form the basic MIM capacitor structure, and the like.

A step 905 of method 900 is to provide a semiconductor substrate havinga patterned interconnect layer formed thereon, where portions of thepatterned interconnect layer define bottom electrodes of a firstcapacitor and of a second capacitor. As an example, the semiconductorsubstrate can be similar to semiconductor substrate 510, first shown inFIG. 5, and the patterned interconnect layer can be similar to patternedinterconnect layer 520, also first shown in FIG. 5. As another example,the first capacitor can be similar to capacitor 710, first shown in FIG.7, and the second capacitor can be similar to capacitor 720, also firstshown in FIG. 7. As still another example, the portions of the patternedinterconnect layer defining bottom electrodes of the first and secondcapacitors can be similar to portions 521 and 522, first shown in FIG.5.

A step 910 of method 900 is to deposit a first dielectric material overthe patterned interconnect layer. As an example, the first dielectricmaterial can be similar to dielectric material 530, first shown in FIG.5.

A step 915 of method 900 is to pattern the first dielectric material,using a first mask, to form an opening that exposes a portion of thepatterned interconnect layer. As an example, the opening can be similarto opening 531, and the exposed portion of the patterned interconnectlayer can be similar to portion 525, both of which are first shown inFIG. 5.

A step 920 of method 900 is to deposit a first electrode material overthe first dielectric material and within the opening such that the firstelectrode material contacts the portion of the patterned interconnectlayer. As an example, the first electrode material can be similar toelectrode material 540, first shown in FIG. 5.

A step 925 of method 900 is to deposit a second dielectric material overthe first electrode material. As an example, the second dielectricmaterial can be similar to dielectric material 550, first shown in FIG.5.

A step 930 of method 900 is to deposit a second electrode material overthe second dielectric material. As an example, the second electrodematerial can be similar to electrode material 560, first shown in FIG.5.

A step 935 of method 900 is to deposit a third dielectric material overthe second electrode material. As an example, the third dielectricmaterial can be similar to dielectric material 570, first shown in FIG.5.

A step 940 of method 900 is to pattern the third dielectric material andthe second electrode material, using a second mask, to form a topelectrode of the first capacitor. As an example, the top electrode ofthe first capacitor can be similar to electrode 611, first shown in FIG.6.

A step 945 of method 900 is to pattern the second dielectric materialand the first electrode material, using a third mask, to form a topelectrode of the second capacitor and at least a portion of a bottomelectrode of the first capacitor. As an example, the top electrode ofthe second capacitor can be similar to electrode 721, first shown inFIG. 7, and the bottom electrode, or portion of the bottom electrode, ofthe first capacitor can be similar to electrode 712, first shown in FIG.7. In one embodiment, step 945 can further comprise forming a resistor.As an example, the resistor can be similar to resistor 730, first shownin FIG. 7.

A step 950 of method 900 is to form at least one electrical contactcoupled to each of the top and bottom electrodes of the first capacitorand to each of the top and bottom electrodes of the second capacitor,where each of the electrical contacts are formed substantiallysimultaneously with each other. In another embodiment, step 950 cancomprise forming electrical contacts coupled to each of the topelectrode of the first capacitor and to each of the top and bottomelectrodes of the second capacitor, but not to the bottom electrode ofthe first capacitor. In that other embodiment, electrode 713 ofcapacitor 710 would be electrically connected through portion 521 toanother portion of the integrated circuit. In still other embodiments,step 950 can comprise forming electrical contacts to the top electrodeof the first capacitor and to the top electrode of the second capacitor,but: (1) not to the bottom electrode of the first capacitor or to thebottom electrode of the second capacitor; and/or (2) not to the bottomelectrode of the second capacitor. In those other embodiments, electrode713 of capacitor 710 and/or electrode 722 of capacitor 720 would beelectrically connected through portions 521 and 522, respectively, toanother portion of the integrated circuit.

In an embodiment of method 900 in which a resistor is formed, step 950or another step can further comprise forming electrical contacts to theresistor. As an example, the electrical contacts can be similar to oneor more of electrical contacts 811, 812, 813, 814, 821, 822, 823, 831,and 832, all of which were first shown in FIG. 8.

FIG. 10 is a cross-sectional view of a portion of a semiconductor device1000 at a particular stage of a manufacturing process according to anembodiment of the invention. As illustrated in FIG. 10, semiconductordevice 1000 comprises a semiconductor substrate 1010, a patternedinterconnect layer 1020 formed on semiconductor substrate 1010, adielectric material 1090 over patterned interconnect layer 1020, anelectrode material 1080 over dielectric material 1090, a dielectricmaterial 1030 over electrode material 1080, an electrode material 1040over dielectric material 1030, a dielectric material 1050 over electrodematerial 1040, an electrode material 1060 over dielectric material 1050,and a dielectric material 1070 over electrode material 1060.

As an example, semiconductor substrate 1010, patterned interconnectlayer 1020, dielectric material 1030, electrode material 1040,dielectric material 1050, electrode material 1060, and dielectricmaterial 1070 can be similar to semiconductor substrate 110, patternedinterconnect layer 120, dielectric material 130, electrode material 140,dielectric material 150, electrode material 160, and dielectric material170, respectively, first shown in FIG. 1. As a further example,electrode material 1080 can be similar to electrode material 140 anddielectric material 1090 can be similar to dielectric material 130, bothof which are first shown in FIG. 1.

In the illustrated embodiment, patterned interconnect layer 1020comprises a portion 1021 and a portion 1022 separated from portion 1021by a gap 1023. Portion 1021, portion 1022, and gap 1023 can be similarto, respectively, portion 121, portion 122, and gap 123, first shown inFIG. 1.

As further illustrated in FIG. 10, dielectric material 1090 has beenpatterned to form an opening 1031 and an opening 1032 that exposeportions of patterned interconnect layer 1020, and electrode material1080 has been deposited over dielectric material 1090 and withinopenings 1031 and 1032 such that electrode material 1080 physically andelectrically contacts, or is coupled to, the exposed portions ofpatterned interconnect layer 1020.

FIG. 11 is a cross-sectional view of a portion of semiconductor device1000 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 1, dielectricmaterial 1070 and electrode material 1060 have been patterned to form anelectrode 1111. As an example, electrode 1111 can be similar toelectrode 211, first shown in FIG. 2.

FIG. 12 is a cross-sectional view of semiconductor device 1000 at alater stage of the manufacturing process according to an embodiment ofthe invention. As illustrated in FIG. 12, dielectric material 1050 andelectrode material 1040 have been patterned to form an electrode 1212and an electrode 1221. As an example, electrode 1221 can be similar toelectrode 721, first shown in FIG. 7.

FIG. 13 is a cross-sectional view of a portion of semiconductor device1000 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 13, electrodes 1111and 1212 are electrodes of a capacitor 1310. As further illustrated inFIG. 13, electrode 1221 is an electrode of a capacitor 1320. As stillfurther illustrated in FIG. 13, dielectric material 1030 and electrodematerial 1080 have been patterned to form an electrode 1313 of capacitor1310, an electrode 1322 of capacitor 1320, and a resistor 1330. At leastportions of capacitors 1310 and 1320 and resistor 1330 are formed abovepatterned interconnect layer 1020. As an example, electrode 1212 andelectrode 1221 can be similar to, respectively, electrode 212 andelectrode 221, both of which were first shown in FIG. 2. As anotherexample, capacitor 1310 can be similar to capacitor 210, first shown inFIG. 2, in that capacitor 1310, like capacitor 210, can have a highcapacitive density. As still another example, capacitor 1320 can besimilar to capacitor 220, first shown in FIG. 2, in that capacitor 1320can have a higher quality than capacitor 1310, just as capacitor 220 canhave a higher quality than capacitor 210.

FIG. 14 is a cross-sectional view of a portion of semiconductor device1000 at a later stage of the manufacturing process according to anembodiment of the invention. As illustrated in FIG. 14, an electricalcontact 1411 has been coupled to electrode 1313 of capacitor 1310,electrical contacts 1412 and 1413 have been coupled to electrode 1111 ofcapacitor 1310, an electrical contact 1414 has been coupled to electrode1212 of capacitor 1310, and an electrical contact 1415 has been coupledto portion 1021 of patterned interconnect layer 1020. As furtherillustrated in FIG. 14, electrical contacts 1421 and 1422 have beencoupled to electrode 1221 of capacitor 1320, an electrical contact 1423has been coupled to electrode 1322 of capacitor 1320, an electricalcontact 1424 has been coupled to portion 1022 of patterned interconnectlayer 1020, and electrical contacts 1431 and 1432 have been coupled toresistor 1330.

Electrical contact to electrode 1313 of capacitor 1310 may beaccomplished using any of a variety of methods. As an example,electrical contact to electrode 1313 may be accomplished via electricalcontact 1411 alone, electrical contact 1415 alone, or portion 1021 ofpatterned interconnect layer 1020 alone. As another example, electricalcontact to electrode 1313 may be accomplished via any two of electricalcontacts 1411 and 1415 and portion 1021 of patterned interconnect layer1020, i.e., via electrical contacts 1411 and 1415, via electricalcontact 1411 and portion 1021, or via electrical contact 1415 andportion 1021. As still another example, electrical contact to electrode1313 may be accomplished via all three of electrical contacts 1411 and1415 and portion 1021 of patterned interconnect layer 1020simultaneously. Similarly, electrical contact to electrode 1322 ofcapacitor 1320 may be accomplished in a variety of ways. As an example,electrical contact to electrode 1322 may be accomplished via electricalcontact 1423 alone, electrical contact 1424 alone, or portion 1022 ofpatterned interconnect layer 1020 alone. As another example, electricalcontact to electrode 1322 may be accomplished via any two of electricalcontacts 1423 and 1424 and portion 1022 of patterned interconnect layer1020, i.e., via electrical contacts 1423 and 1424, via electricalcontact 1423 and portion 1022, or via electrical contact 1424 andportion 1022. As still another example, electrical contact to electrode1322 may be accomplished via all three of electrical contacts 1423 and1424 and portion 1022 of patterned interconnect layer 1020simultaneously.

It will be understood by one of ordinary skill in the art that aparticular electrical contact method used for one of capacitors 1310 and1320 does not necessarily affect an electrical contact method used forthe other one of capacitors 1310 and 1320. Instead, any of theabove-mentioned electrical contact methods is possible for eithercapacitor, without regard to the particular electrical contact methodselected for the other capacitor.

As known in the art, resistor 1330 could, in certain embodiments, becoupled to further electrical contacts in addition to the two electricalcontacts 1431 and 1432 illustrated in FIG. 14. Similarly, electrodes1111, 1212, and 1313 of capacitor 1310 and electrodes 1221 and 1322 ofcapacitor 1320 could be coupled to further electrical contacts inaddition to the one or two electrical contacts illustrated in FIG. 14 tobe coupled to electrodes 1111, 1212, 1313, 1221, and 1322. In theillustrated embodiment, capacitor 1310, like capacitor 210, comprises astacked capacitor having two MIM capacitors wired in parallel.

In one embodiment, at least electrical contacts 1411, 1412, 1413, 1414,1421, 1422, and 1423 are formed substantially simultaneously with eachother. In a non-illustrated embodiment, at least electrical contacts1412, 1413, 1414, 1421, 1422, and 1423 are formed substantiallysimultaneously with each other, but electrical contact 1411 is notformed. In that non-illustrated embodiment, electrode 1313 of capacitor1310 would be electrically connected through portion 1021 to anotherportion of the integrated circuit.

FIG. 15 is a flowchart illustrating a method 1500 of makingsemiconductor device 1000 according to an embodiment of the invention.Method 1500 comprises, among other steps, four patterning steps,indicating that method 1500 is a four-mask manufacturing methodintegrating a two-mask and a three-mask MIM capacitor with a resistor ona single integrated circuit. It will be understood by one of ordinaryskill in the art that the four masks referred to in the precedingsentence are the masks required to form a MIM capacitor in accordancewith an embodiment of the invention, and that additional masks may berequired to form other portions of the integrated circuit, such as, forexample, the patterned interconnect layer, the upper interconnectstructure, optional layers not required to form the basic MIM capacitorstructure, and the like.

A step 1505 of method 1500 is to provide a semiconductor substratehaving a patterned interconnect layer formed thereon. As an example, thesemiconductor substrate can be similar to semiconductor substrate 1010,first shown in FIG. 10. As a further example, the patterned interconnectlayer can be similar to patterned interconnect layer 1020, also firstshown in FIG. 10.

A step 1510 of method 1500 is to deposit a first dielectric materialover the patterned interconnect layer. As an example, the firstdielectric material can be similar to dielectric material 1090, firstshown in FIG. 10.

A step 1515 of method 1500 is to pattern the first dielectric material,using a first mask, to form a first opening and a second opening in thefirst dielectric material. As an example, the first opening can besimilar to opening 1031, and the second opening can be similar toopening 1032, both of which are first shown in FIG. 10.

A step 1520 of method 1500 is to deposit a first electrode material onthe first dielectric material and in the first and second openings. Asan example, the first electrode material can be similar to electrodematerial 1080, first shown in FIG. 10.

A step 1525 of method 1500 is to deposit a second dielectric material onthe first electrode material. As an example, the second dielectricmaterial can be similar to dielectric material 1030, first shown in FIG.10.

A step 1530 of method 1500 is to deposit a second electrode material onthe second dielectric material. As an example, the second electrodematerial can be similar to electrode material 1040, first shown in FIG.10.

A step 1535 of method 1500 is to deposit a third dielectric material onthe second electrode material. As an example, the third dielectricmaterial can be similar to dielectric material 1050, first shown in FIG.10.

A step 1540 of method 1500 is to deposit a third electrode material onthe third dielectric material. As an example, the third electrodematerial can be similar to electrode material 1060, first shown in FIG.10.

A step 1545 of method 1500 is to deposit a fourth dielectric materialover the third electrode material. As an example, the fourth dielectricmaterial can be similar to dielectric material 1070, first shown in FIG.10.

A step 1550 of method 1500 is to pattern the fourth dielectric materialand the third electrode material, using a second mask, to form a topelectrode of a first capacitor. As an example, the first capacitor canbe similar to capacitor 1310, first shown in FIG. 13, and the topelectrode of the first capacitor can be similar to electrode 1111, firstshown in FIG. 11.

A step 1555 of method 1500 is to pattern the third dielectric materialand the second electrode material, using a third mask, to form a middleelectrode of the first capacitor and a top electrode of a secondcapacitor. As an example, the second capacitor can be similar tocapacitor 1320, first shown in FIG. 13. As another example, the middleelectrode of the first capacitor can be similar to electrode 1212, firstshown in FIG. 12, and the top electrode of the second capacitor can besimilar to electrode 1221, also first shown in FIG. 12.

A step 1560 of method 1500 is to pattern the second dielectric materialand the first electrode material, using a fourth mask, to form a bottomelectrode of the first capacitor, a bottom electrode of the secondcapacitor. In at least one embodiment, performing step 1560 also forms aresistor. As an example, the bottom electrode of the first capacitor canbe similar to electrode 1313, and the bottom electrode of the secondcapacitor can be similar to electrode 1322, both of which are firstshown in FIG. 13. As another example, the resistor can be similar toresistor 1330, also first shown in FIG. 13.

A step 1565 of method 1500 is to form electrical contacts to each of thetop, middle, and bottom electrodes of the first capacitor and to each ofthe top and bottom electrodes of the second capacitor. In embodimentswhere step 1560 forms a resistor, step 1565 or another step can furthercomprise forming electrical contacts to the resistor. As an example, theelectrical contacts can be similar to one or more of electrical contacts1411, 1412, 1413, 1414, 1415, 1421, 1422, 1423, 1424, 1431, and 1432,all of which were first shown in FIG. 14.

It will be apparent to one of ordinary skill in the art that anintegrated circuit having dual MIM capacitors can be formed using otherprocess flows in addition to those described above. For example, in anon-illustrated embodiment, a semiconductor device having dual MIMcapacitors can be formed by: providing a semiconductor substrate havinga patterned interconnect layer formed thereon; depositing a firstdielectric material on the patterned interconnect layer; patterning thefirst dielectric material to create a first opening to the patternedinterconnect layer for a first capacitor; depositing a first electrodematerial over the first dielectric material and in the first opening;depositing a second dielectric material over the first electrodematerial; patterning the second dielectric material, the first electrodematerial, and the first dielectric material to create a second openingto the patterned interconnect layer for a second capacitor; depositing asecond electrode material over the second dielectric material and in thesecond opening; depositing a third dielectric material over the secondelectrode material; patterning the third dielectric material and thesecond electrode material to define a top electrode for the firstcapacitor and a bottom electrode for the second capacitor; depositing athird electrode material over the third dielectric material; depositinga fourth dielectric material over the third electrode material;patterning the fourth dielectric material and the third electrodematerial to define a top electrode for the second capacitor; patterningthe second dielectric material and the first electrode material toisolate the bottom electrode of the first capacitor and the bottomelectrode of the second capacitor and to define a resistor; and creatingelectrical contacts to the electrodes of the capacitors and to theresistor.

The structure formed by the process described in the preceding paragraphcan comprise a first capacitor similar to capacitor 710, first shown inFIG. 7, but differing at least in that additional dielectric and/orelectrode material can be located at either or both ends of an electrodeanalogous to electrode 611 and above a portion of a dielectric materialanalogous to dielectric material 550. Additionally, the structure formedby the process described in the preceding paragraph can further comprisea second capacitor similar to capacitor 1320, first shown in FIG. 13,but differing at least in that additional dielectric and/or electrodematerial can be located at either or both ends of an electrode analogousto electrode 1221 and above a portion of a dielectric material analogousto dielectric material 1030, and in that an electrode material analogousto electrode material 1080 and a dielectric material analogous todielectric material 1030 can have deeper openings formed thereinresulting in the stated materials having a different configuration.Furthermore, the structure formed by the process described in thepreceding paragraph can further comprise a resistor similar to, forexample, resistor 1330, first shown in FIG. 13.

FIG. 16 is a cross-sectional view of a portion of a semiconductor device1600 at a particular stage of a manufacturing process according to anembodiment of the invention. As illustrated in FIG. 16, semiconductordevice 1600 comprises a semiconductor substrate 1610 having a patternedinterconnect layer 1620 formed thereon, a dielectric material 1630 overpatterned interconnect layer 1620, an electrode material 1640 overdielectric material 1630, a dielectric material 1650 over electrodematerial 1640, an electrode material 1660 over dielectric material 1650,and a dielectric material 1670 over electrode material 1660. As anexample, semiconductor substrate 1610, dielectric material 1630,electrode material 1640, dielectric material 1650, electrode material1660, and dielectric material 1670 can be similar to, respectively,semiconductor substrate 110, dielectric material 130, electrode material140, dielectric material 150, electrode material 160, and dielectricmaterial 170, all of which were first shown in FIG. 1. As anotherexample, patterned interconnect layer 1620 can be similar to patternedinterconnect layer 120, first shown in FIG. 1, except patternedinterconnect layer 1620, in the illustrated embodiment, comprises only aportion 1622, corresponding to portion 122 of patterned interconnectlayer 120. Any portion corresponding to portion 121 of patternedinterconnect layer 120 is absent from patterned interconnect layer 1620.

As further illustrated in FIG. 16, dielectric material 1670 andelectrode material 1660 have been patterned to form an electrode 1611 ofa capacitor 1615. As further illustrated in FIG. 16, dielectric material1650 and electrode material 1640 have been patterned to form anelectrode 1621 of a capacitor 1625, and to form an electrode 1612 ofcapacitor 1615. At least portions of capacitors 1615 and 1625 are formedabove patterned interconnect layer 1620.

In one embodiment of the invention, portion 1622 of patternedinterconnect layer 1620 forms an electrode 1682 of capacitor 1625. As anexample, electrode 1611 can be a top electrode of capacitor 1615, andelectrode 1612 can be a bottom electrode of capacitor 1615. As anotherexample, electrode 1621 can be a top electrode of capacitor 1625 andelectrode 1682 can be a bottom electrode of capacitor 1625.

As still further illustrated in FIG. 16, electrical contacts 1662 and1663 have been coupled to electrode 1611 of capacitor 1615, andelectrical contact 1664 has been coupled to electrode 1612 of capacitor1615. Electrical contacts 1671 and 1672 have been coupled to electrode1621 of capacitor 1625, and an electrical contact 1673 has been coupledto electrode 1682 of capacitor 1625. As known in the art, electrodes1611 and 1612 of capacitor 1615 and electrodes 1621 and 1682 ofcapacitor 1625 could be coupled to further electrical contacts inaddition to the one or two electrical contacts illustrated in FIG. 16 tobe coupled to electrodes 1611, 1612, 1621, and 1682. In one embodiment,at least electrical contacts 1662, 1663, 1664, 1671, 1672, and 1673 areformed substantially simultaneously with each other.

Semiconductor device 1600 further comprises a portion 1690 formed byportions of electrode material 1640 and dielectric material 1650. In oneembodiment, portion 1690 can be used to form a resistor, which resistorcan be similar to resistor 230, first shown in FIG. 2. In thatembodiment, electrical contacts can be coupled to the resistor in amanner similar to that shown and described for resistor 230.

FIG. 17 is a flow chart illustrating a method 1700 of makingsemiconductor device 1600 according to an embodiment of the invention. Astep 1710 of method 1700 is to provide a semiconductor substrate havinga patterned interconnect layer formed thereon, where the patternedinterconnect layer forms a bottom electrode of a second capacitor and isabsent from a first capacitor. As an example, the semiconductorsubstrate can be similar to semiconductor substrate 1610, first shown inFIG. 16, and the patterned interconnect layer can be similar topatterned interconnect layer 1620, also first shown in FIG. 16. Asanother example, the first capacitor can be similar to capacitor 1615,the second capacitor can be similar to capacitor 1625, and the bottomelectrode of the second capacitor can be similar to electrode 1682, allof which were first shown in FIG. 16.

A step 1720 of method 1700 is to deposit a first dielectric materialover the patterned interconnect layer. As an example, the firstdielectric material can be similar to dielectric material 1630, firstshown in FIG. 16.

A step 1730 of method 1700 is to deposit a first electrode material overthe first dielectric material. As an example, the first electrodematerial can be similar to electrode material 1640, first shown in FIG.16.

A step 1740 of method 1700 is to deposit a second dielectric materialover the first electrode material. As an example, the second dielectricmaterial can be similar to dielectric material 1650, first shown in FIG.16.

A step 1750 of method 1700 is to deposit a second electrode materialover the second dielectric material. As an example, the second electrodematerial can be similar to electrode material 1660, first shown in FIG.16.

A step 1760 of method 1700 is to deposit a third dielectric materialover the second electrode material. As an example, the third dielectricmaterial can be similar to dielectric material 1670, first shown in FIG.16.

A step 1770 of method 1700 is to pattern the third dielectric materialand the second electrode material to form a top electrode of the firstcapacitor. As an example, the top electrode of the first capacitor canbe similar to electrode 1611, first shown in FIG. 16.

A step 1780 of method 1700 is to pattern the second dielectric materialand the first electrode material to form a top electrode of the secondcapacitor and an electrode of the first capacitor. As an example, thetop electrode of the second capacitor can be similar to electrode 1621and the electrode can be similar to electrode 1612, both of which arefirst shown in FIG. 16.

A step 1790 of method 1700 is to form at least one electrical contactcoupled to at least the top and bottom electrodes of the first capacitorand to the top and bottom electrodes of the second capacitor. As anexample, the electrical contacts can be similar to one or more ofelectrical contacts 1662, 1663, 1664, 1671, 1672, and 1673, all of whichwere first shown in FIG. 16. In one embodiment of method 1700, step 1790comprises forming the electrical contacts simultaneously with eachother.

In one embodiment of method 1700, step 1780 can be used to form aresistor over the semiconductor substrate. In that embodiment, and as anexample, the resistor can be similar to 230, first shown in FIG. 2. Theresistor can be formed using a portion of the first electrode materialand the second dielectric material. As an example, the portion of thefirst electrode material and the second dielectric material can besimilar to portion 1690, first shown in FIG. 16.

Although the invention has been described with reference to specificembodiments, it will be understood by those skilled in the art thatvarious changes may be made without departing from the spirit or scopeof the invention. Various examples of such changes have been given inthe foregoing description. Accordingly, the disclosure of embodiments ofthe invention is intended to be illustrative of the scope of theinvention and is not intended to be limiting. It is intended that thescope of the invention shall be limited only to the extent required bythe appended claims. For example, to one of ordinary skill in the art,it will be readily apparent that the semiconductor device discussedherein may be implemented in a variety of embodiments, and that theforegoing discussion of certain of these embodiments does notnecessarily represent a complete description of all possibleembodiments.

Additionally, benefits, other advantages, and solutions to problems havebeen described with regard to specific embodiments. The benefits,advantages, solutions to problems, and any element or elements that maycause any benefit, advantage, or solution to occur or become morepronounced, however, are not to be construed as critical, required, oressential features or elements of any or all of the claims.

Moreover, embodiments and limitations disclosed herein are not dedicatedto the public under the doctrine of dedication if the embodiments and/orlimitations: (1) are not expressly claimed in the claims; and (2) are orare potentially equivalents of express elements and/or limitations inthe claims under the doctrine of equivalents.

1. A semiconductor device comprising: a semiconductor substrate; apatterned interconnect layer above the semiconductor substrate; a firstcapacitor above the patterned interconnect layer; a second capacitorabove the patterned interconnect layer; and a resistor above thepatterned interconnect layer, wherein: the first capacitor comprises alayer of electrode material and further comprises a first number ofdielectric layers; the second capacitor comprises the layer of electrodematerial and further comprises a second number of dielectric layers; andthe first number of dielectric layers is greater than the second numberof dielectric layers such that the first capacitor has a highercapacitance per unit area than does the second capacitor.
 2. Thesemiconductor device of claim 1, wherein: at least one of the dielectriclayers of the first capacitor comprises a material that is differentfrom a material of at least one of the dielectric layers of the secondcapacitor.
 3. The semiconductor device of claim 1, wherein: the firstnumber of dielectric layers comprises a first dielectric material and asecond dielectric material; the second number of dielectric layerscomprises the first dielectric material; the first dielectric materialcomprises silicon nitride; and the second dielectric material comprisesa material having an effective dielectric constant greater thanapproximately eight.
 4. The semiconductor device of claim 1, wherein:the first number of dielectric layers comprises a first dielectricmaterial and a second dielectric material; the second number ofdielectric layers comprises the first dielectric material; the firstdielectric material comprises silicon nitride; the second dielectricmaterial comprises a material having an effective dielectric constantgreater than approximately eight; and the layer of electrode materialcomprises tantalum nitride.
 5. The semiconductor device of claim 1,wherein: the first number of dielectric layers comprises a firstdielectric material and a second dielectric material; the second numberof dielectric layers comprises the first dielectric material; the firstdielectric material comprises silicon nitride; and the second dielectricmaterial comprises: a first layer of hafnium oxide; a layer of tantalumoxide above the first layer of hafnium oxide; and a second layer ofhafnium oxide above the layer of tantalum oxide.
 6. The semiconductordevice of claim 1, wherein: the patterned interconnect layer comprises:a first portion; a gap; and a second portion separated from the firstportion by the gap; the gap comprises at least one of a region ofsilicon dioxide and a region of silicon dioxide-based material.
 7. Thesemiconductor device of claim 1, wherein: the patterned interconnectlayer comprises a bottom electrode of the second capacitor and is absentfrom the first capacitor.
 8. The semiconductor device of claim 1,wherein: the patterned interconnect layer comprises a bottom electrodeof the first capacitor and a bottom electrode of the second capacitor.9. The semiconductor device of claim 1 wherein: the patternedinterconnect layer comprises damascene copper; and the first and secondelectrode materials comprise tantalum nitride.
 10. The semiconductordevice of claim 1 wherein: the first number of dielectric layerscomprises a first dielectric material and a second dielectric material;the second number of dielectric layers comprises the first dielectricmaterial; the first dielectric material comprises silicon nitride; thesecond dielectric material comprises: a first layer of hafnium oxide; alayer of tantalum oxide above the first layer of hafnium oxide; and asecond layer of hafnium oxide above the layer of tantalum oxide; thepatterned interconnect layer comprises damascene copper; and the firstand second electrode materials comprise tantalum nitride.
 11. Asemiconductor device, comprising: a semiconductor substrate having apatterned interconnect layer formed thereover; a first dielectricmaterial over the patterned interconnect layer; a patterned firstelectrode material over the first dielectric material that comprises anelectrode of a first capacitor, an electrode of a second capacitor, anda resistor; a second dielectric material over the first electrodematerial; and a patterned second electrode material over the seconddielectric material that comprises a top electrode of the firstcapacitor.
 12. The semiconductor device of claim 11, wherein: thepatterned interconnect layer comprises a bottom electrode of the secondcapacitor and is absent from the first capacitor.
 13. The semiconductordevice of claim 11, wherein: the patterned interconnect layer comprisesa bottom electrode of the first capacitor and a bottom electrode of thesecond capacitor.
 14. The semiconductor device of claim 13, wherein: theelectrode of the first capacitor comprises a middle electrode of thefirst capacitor; and the middle electrode of the first capacitor islocated between the top electrode of the first capacitor and the bottomelectrode of the first capacitor.
 15. The semiconductor device of claim14, further comprising: electrical contacts coupled to each of the topand middle electrodes of the first capacitor but not to the bottomelectrode of the first capacitor; and electrical contacts coupled to atleast one of the top and bottom electrodes of the second capacitor. 16.The semiconductor device of claim 11, wherein: the first capacitor has ahigher capacitance per unit area than does the second capacitor.
 17. Thesemiconductor device of claim 11, wherein: the patterned interconnectlayer comprises: a first portion; a gap; and a second portion separatedfrom the first portion by the gap; the gap comprises at least one of aregion of silicon dioxide, and a region of silicon dioxide-basedmaterial.
 18. The semiconductor device of claim 11, wherein: the firstdielectric material comprises silicon nitride; and the second dielectricmaterial comprises a material having an effective dielectric constantgreater than approximately eight.
 19. The semiconductor device of claim11, wherein: the first dielectric material comprises silicon nitride;the second dielectric material comprises: a first layer of hafniumoxide; a layer of tantalum oxide above the first layer of hafnium oxide;and a second layer of hafnium oxide above the layer of tantalum oxide;the patterned interconnect layer comprises damascene copper; and thefirst and second electrode materials comprise tantalum nitride.
 20. Asemiconductor device comprising: a semiconductor substrate; a firstcapacitor comprising: at least a first portion of a patternedinterconnect layer over the semiconductor substrate; at least a firstportion of a first dielectric material over the patterned interconnectlayer; and a first portion of a first electrode material over the firstdielectric material; a resistor comprising: a second portion of thefirst dielectric material; and a second capacitor comprising: a secondportion of the first electrode material; at least a first portion of asecond dielectric material over the first electrode material; and atleast a first portion of a second electrode material over the seconddielectric material.